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  3. 368 a transistor which may be approximated as a hemi...

Question: 368 a transistor which may be approximated as a hemi...

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3.68 A transistor, which may be approximated as a hemi spherical heat source of radius r-0.1 mm, is embed- ded in a large silicon substrate (k 125 W/m. K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T-27°C except for the top surface, which is well insulated. Silicon substrate T. Obtain a general expression for the substrate tempera ture distribution and evaluate the surface temperature of the heat source for q = 4 W

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