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Can someone help me solving this question. The final answer is 3.594 kg/m^2*min

A silicon thin film is created for a microelectronic device by chemical vapor deposition (CVD) of SiH4 onto a wafer surface by the reaction: (s) T 4F12(g) Molecular diffusion of gaseous reactants and products takes place in the gas near the wafer. The thickness of the gas film where the diffusion takes place is 0.8mm. On the outside of the stagnant gas film the gas concentration is 60% SiH4 and 40% H2. The reaction at the surface is instantaneous. The temperature of the gas film is 550K, while the pressure is 1lbar. Estimate the rate of silicon film production at the surface in kg/m2 min

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