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Question: design a mask opening shown as in the above...

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450 μm 350 μm

design a mask opening (shown as ?? in the above figure) to fabricate the given structure in Si.

Etching is performed in TMAH at 20% concentration and 90 degree celsius

Following etching rates are given:

Etching rate in (100) direction is 0.6 um/min

Etching rate in (111) direction is 0.027

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