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Question: for a floatinggate nonvolatile memory the lower insulator has a...

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For a floating-gate nonvolatile memory, the lower insulator has a dielectric constant of 4 and is 10 nm thick. The insulator above the floating gate has a dielectric constant of 10 and is 100 nm thick. If the current density J in the lower insulators is given by J-oE, where ơ-10- S/cm, and the current density in the other insulator is negligibly small, find the threshold voltage shift of the device caused by a voltage of 10 V applied to the control gate for (i) 0.25 μs, and (ii) a sufficiently long time that J in the lower insulator becomes negligibly small. [Hint: 1-D Gauss law: dEdr-ρ/ εεο, where ε is the dielectric constant, the permittivity of free space 8.85x1014 F/cm, and p is the total electric charge density.] (15 marks) Q2 b) required in USLI interconnection networks? interconnect structure for RC analysis is shown in Fig. Q2b Why are interlayer dielectric materials with low dielectric constant (low k) Derive a formula for the RC delay associated with global interconnects. The (10 marks) 3E Si Fig. Q2b Interconnect structure for RC analysis. The two lines on top are the metal interconnects of dimensions W, L, and H sitting on an oxide layer. There is also oxide between and above the metal lines Q2 c) Briefly explain the meaning of the terms i) dry etching ii) wet etching ii) chemical etching iv) physical etching (8 marks) Continued

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