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A silicon pn junction diode is created such that xn-100xp with a built-in potential of 0.8 V. Use following constants for this problem: ε,-11.0 and ε0-8.85x 10.14 F/cm, n 1.5x1010 cm3, Vr 26 mV, q 1.6 x 10-19 C. (20 points) Won-type ND 5. NA NAND Find the values of the NA and No. (20points)

A silicon pn junction diode is created such that xn-100xp with a built-in potential of 0.8 V. Use following constants for this problem: ε,-11.0 and ε0-8.85x 10.14 F/cm, n 1.5x1010 cm3, Vr 26 mV, q 1.6 x 10-19 C. (20 points) Won-type ND 5. NA NAND Find the values of the NA and No. (20points)

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