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Question: problem1 a silicon thin film is created for a microelectronic...

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Problem1 A silicon thin film is created for a microelectronic device by chemical vapor deposition (CVD) of SiH4 onto a wafer surface by the reaction: SiHg Sis)+2H29) Molecular diffusion of gasecous reactants and products takes place in the gas nesar h ef the tside of the thickness of the gas film where the diffusion takes place is 0.8mm. On the ou stagnant gas f instantaneous. The rate of silicon film production at the surface in kg/m2 min. im the gas concentration is 60% SiH4 and 40% H2. The reaction at the surface is Estimate the temperature of the gas film is 55OK, while the pressure is 1 bar.
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