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Question: q2 a discuss the sources of charge leakage and the...

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Q2 a) Discuss the sources of charge leakage and the charge sharing problem in dynamic IC design, respectively. What are the methods used in domino CMOS circuits to solve the charge leakage problem and the charge sharing problem? (15 marks) Q2 b) Why are dielectric materials with high dielectric constant (high k) required in ULSI Iechniques? Assume a DRAM vertical capacitor has the following parameters: C 40 fF, cell size A-1.28 μ㎡, and k= 3.9 for silicon dioxide. If we replace SiO2 with HfO2(k 25) without changing thickness, what is the equivalent cell area of the capacitor? (8 marks) A dielectric material is placed bctwccn two parallcl mctal lines. For the two mctal lines, the length L -1cm, width W 0.28 um, thickness H 0.3 um, and spacing Ls0.36 um. Assume fringing effects with this gcomctry can be ignored. (i) Calculate the RC time constant. The metal is Al with a resistivity of 2.67 μΩ.cm, and the dielectric is silicon dioxide with dielectric constant 3.9 (ii) Calculate the RC time constant. The metal is Cu with a resistivity of 1.7 μΩ.cm, and the dielectric is organic polymer with dielectric constant 2.8 (iii) Compare the results in (i) and (i). How much can we decrcasc the RC timc constant? Hint: Permittivity of free space -8.85 x 101* F/cm.] (10 marks)

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