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  3. special problem 20 as shown in the figure below light...

Question: special problem 20 as shown in the figure below light...

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Special Problem (20). As shown in the figure below, light uniformly illuminates half of a bar of S1 for x > 0, resulting in a uniform generation rate of 1-1016/cm3/sec electron-hole pairs per unit volume per unit time throughout the bar for x> 0. There is no generation for x< 0. Assume steady state conditions hold, and the bar is uniformly doped n-type 1x10/cm. The minority carrier lifetime is Tp 10-6, D,-10 cm/s and assume T-300 K. (a) What is the hole concentration at x=- ? Why? (b) what is the hole concentration at x= +㏄? Why? (c) Do low level injection conditions hold throughout? (d) Determine Apn(x) throughout for all X. (Hint: write separate general solutions for Δpn(x) for both x > 0 and x < 0, apply boundary conditions for x far away from the origin. At the origin, x0, both Apnx) anod aAp(x)/ax must be continuous.

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