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Question: strainedsi 10 nd nmos made on hitachis sige virtual substrate...

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Strained-Si (10%) nd nMOS made on Hitachis SiGe Virtual Substrate, published at IED 2001, demonstrated excellent performance of both What are the major physical reason to prevent this tec (b) What are the methods to apply strain into Intels p- and higher electron and hole mobility hnology into real manufacture n-MOS?

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