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Question: typical circuit parameters for the following questions consider the following...

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Typical circuit parameters for the following questions: Consider the following Pseudo-NMOS inverter circuit mn Up Tox 500 cm/V-sec. 250 cmV-sec 3.54 x 10-13 F/cm 5.0 x 10-6 cm 2/ Vdd = 5V L-1um Threshold voltage of NMOS transistors Ids1 W-90um 1.0V 4.0V th dep Threshold voltage of PMOS transistors 1.0V Vout th | Ids2 in L-1 um a) Draw input output curves (input on x-axis and output on y-axis) for 0 < Vin < Vdd (5 pts) b) Show regions of operation (cutoff, lin, sat) for both the p and n devices (5 pts) c) Derive Idd for all region of operations when devices are on only (15 pts) For example Ids F(Vin, ..) when 1v < Vin <2v

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